A long standing issue in heteroepitaxial systems is the origin of atomic ordering in SiGe nanoislands grown on silicon substrates. The theoretical group of the Unit has recently proposed a mechanism that explains the observed ordering. We show that this is a surface/facet related phenomenon driven by surface equilibrium rather than by surface kinetics. The results will guide manufacturing processes for optimum optoelectronic and memory storage applications. The results have been published in the leading journal of basic physics, Physical Review Letters.
G Vantarakis, IN Remediakis, PC Kelires, 'Ordering Mechanisms in Epitaxial SiGe Nanoislands', PRL 108, 176102, 2012.
Prof. Kelires has joined the Editorial Board of Scientific Reports - a Journal from the publishers of Nature
A long standing issue in heteroepitaxial systems is the origin of atomic ordering in SiGe nanoislands grown on silicon substrates. The theoretical group of the Unit has recently proposed a mechanism that explains the observed ordering. We show that this is a surface/facet related phenomenon driven by surface equilibrium rather than by surface kinetics. The results will guide manufacturing processes for optimum optoelectronic and memory storage applications. The results have been published in the leading journal of basic physics, Physical Review Letters.
G Vantarakis, IN Remediakis, PC Kelires, 'Ordering Mechanisms in Epitaxial SiGe Nanoislands', PRL 108, 176102, 2012.