Research Topic Title:

Improved Reliability Condition and Health Monitoring in the energy sector enabled through innovations in Wide Bandgap (WBG) and Ultra-Wide Bandgap (UWBG) Semiconductor Technologies

No. of Openings:

2

Description:

Overview: We are seeking applications for up to two PhD positions at the Cyprus University of Technology, to investigate current and emerging WBG and UWBG based power device technologies, with scope address critical challenges related to Condition and Health Monitoring of power electronics in the energy sector. This cutting-edge PhD program is aligned with FLAGCHIP – Flagship advanced solutions for Condition and Health monitoring In Power electronics – program, funded under the EU Horizon Europe Research and Innovation Action (RIA) scheme. Successful applicants will join a competitive consortium of 11 partners, from 8 different countries, with a strong research group (2 RTOs and 4 Universities) collaborating with key stakeholders that include industrial players (3 Large companies and 2 SME) such as manufacturers, research-based companies and business development firms.

Research Context: Recent advancements in Silicon Carbide (SiC) MOSFET technology have been propelled by the availability of high-quality SiC wafers with lower defect densities and larger sizes. These improvements have made SiC MOSFETs commercially viable for low voltage applications (e.g. 600V to 1200V) in motor drives, electrical cars, power supplies, and solar inverters. More recently, 3.3kV class SiC MOSFETs have entered the market, targeting higher voltage applications like rail transportation and medium voltage drives. However, for high voltage direct current (HVDC) and medium voltage direct current (MVDC) applications, current technology requires the connections of multiple low voltage SiC MOSFETs, leading to increased system complexity and cost. Additionally, monitoring the health of such power electronic systems remains a challenge.

Project Goals: The project aims to enhance our understanding of degradation and physics-of-failure of SiC MOSFETs with scope to inform the development of innovative Condition and Health monitoring methodologies. Building on that, the project will design new SiC-MOSFETs of voltage rating above what is commercially available (e.g. 6.5kV and above) with increased reliability and performance. Also, the project will investigate UWBG technologies such as Ga2O3, AlGaN, AlN and diamond, and benchmark them against SiC-MOSFETs to lay the foundation of future power semiconductor devices technology development.

Funding:

Funding is available through involvement and active contribution to the FLAGCHIP – Flagship advanced solutions for Condition and Health monitoring In Power electronics – program, funded under the EU Horizon Europe Research and Innovation Action (RIA) scheme.

Required Qualifications:

Undergraduate (BSc) and postgraduate (MSc) degrees in Electrical or Electronics Engineering or Physics or Chemistry or related fields. Prior research experience or specialisation in related topics will be considered an advantage.

Research Advisor:

Name/Surname:

Neophytos Lophitis

Position:

Assistant Professor

Email:

n.lophitis@cantab.net